Subthreshold Voltage Operation of C 6288 at 45 nm technology

نویسندگان

  • Huiting Zhang
  • Vishwani D. Agrawal
چکیده

This paper examine the effect of subthreshold voltage in function, delay, power and energy. Benchmark circuit c6288 in 45 nm technology is used in this design. The focus of this work is to find the optimal power delay product of benchmark circuit at subthreshold operation. The simulation was done using HSPICE. Results show that the 45nm cell libraries support the subthreshold operation of electronic circuits while providing reasonable power and energy savings. The result shows 87% of energy reduction with subthreshold voltage operation Key words—c6288, low voltage operation, very low power design, subthreshold operation.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Differential Subthreshold SRAM Cell for Ultra-Low Voltage Embedded Computing Applications

With scaling of CMOS technology, data stability of SRAM at ultra-low supply voltage has become a critical issue for embedded wearable computing applications. In this work, we suggest an advanced 8T SRAM cell which can operate properly in subthreshold voltage regime. The cell utilizes a differential swing in the read and write path, and allows an efficient column-interleaving structure. In the r...

متن کامل

SUBTITLE An Ultra - low Power Memory with a Subthreshold Power Supply

A 512 x 13b ultra-low power subthreshold memory is fabricated on a 130-nm process technology. The fabricated memory is fully functional for read operation with a 190 mV power supply at 28 kHz, and 216 mV for write operation. Single bits are measured to read and write properly with VDD as low as 103 mV and 129 mV, respectively. The memory operates at a 1 MHz clock rate with a 310 mV power supply...

متن کامل

A 0.8-V 110-nA CMOS current reference circuit using subthreshold operation

This paper proposes a low voltage CMOS nano-ampere current reference circuit and presents its performance with circuit simulations in 180-nm technology. The proposed circuit consists of biasvoltage, current-source and offset-voltage sub-circuits with most of MOSFETs operating in subthreshold region. Simulation results show that the circuit generates a stable reference current of 110-nA in suppl...

متن کامل

A New Technique for Leakage Reduction in 65 nm Footerless Domino Circuits

A new circuit technique for 65 nm technology is proposed in this paper for reducing the subthreshold and gate oxide leakage currents in idle and non idle mode of operation for footerless domino circuits. In this technique a p-type and an n-type leakage controlled transistors (LCTs) are introduced between the pull-up and pull-down network and the gate of one is controlled by the source of the ot...

متن کامل

Voltage Reference Circuit Consisting of Subthreshold MOSFETs

A low-power CMOS voltage reference was developed using a 0.35 m standard CMOS process technology. The device consists of MOSFET circuits operated in the subthreshold region and uses no resistors. It generates two voltages having opposite temperature coefficients and adds them to produce an output voltage with a near-zero temperature coefficient. The resulting voltage is equal to the extrapolate...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015